unisonic technologies co., ltd utt50n05 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-663.a 50a, 50v n-channel enhancement mode power mosfet transistor ? description the utc utt50n05 is an n-channel enhancement power mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. the utc utt50n05 is suitable for motor control, ac-dc or dc-dc converters and audio amplifiers, etc. ? features * r ds(on) =18m ? @ v gs =10v,i d =20a * high switching speed * high current capacity * low gate charge(typical 30nc) ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing utt50n05l-tn3-r UTT50N05G-TN3-R to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
utt50n05 preliminary power mosfe unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-663.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 50 v gate-source voltage v gss 20 v continuous i d 50 a drain current pulsed i dm 200 a single pulsed e as 400 mj avalanche energy repetitive e ar 100 mj power dissipation p d 113 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 100 c/w junction to case jc 1.1 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 50 v drain-source leakage current i dss v ds =100v, v gs =0v 10 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2 4 v static drain-source on-state resistance r ds(on) v gs =10v, i d =20a 18 23 m ? dynamic parameters input capacitance c iss 900 1220 pf output capacitance c oss 430 550 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 80 100 pf switching parameters total gate charge q g 30 40 nc gate to source charge q gs 9.6 nc gate to drain charge q gd v gs =10v, v ds =30v, i d =50a, i g =3.33ma 10 nc turn-on delay time t d(on) 40 60 ns rise time t r 100 200 ns turn-off delay time t d(off) 90 180 ns fall-time t f v dd =30v, i d =15a, r g =2.5 ? , v gs =10v 80 160 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 50 a maximum body-diode pulsed current i sm 200 a drain-source diode forward voltage v sd i s =50a, v gs =0v 1.5 v
utt50n05 preliminary power mosfe unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-663.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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